Hoya. has filed a patent for a reflective mask blank designed to reduce shadowing effects and create precise phase-shift patterns. The blank includes a multilayer reflective film and a phase-shift film with specific materials like tantalum, chromium, and ruthenium. The phase difference ranges from 130 to 160 degrees or 200 to 230 degrees, with defined refractive index and extinction coefficient values. GlobalData’s report on Hoya gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Hoya, AI-assisted medical imaging was a key innovation area identified from patents. Hoya's grant share as of January 2024 was 42%. Grant share is based on the ratio of number of grants to total number of patents.
Reflective mask blank with reduced shadowing effect and fine pattern
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A patent application (Publication Number: US20240036458A1) discloses a reflective mask blank for extreme ultraviolet (EUV) lithography. The reflective mask blank includes a substrate, a multilayer reflective film, and a phase shift film. The phase shift film consists of a first layer containing tantalum or chromium and a second layer containing ruthenium. The phase shift film has a specific phase difference of 130 to 160 degrees or 200 to 230 degrees, with refractive index and extinction coefficient values optimized for EUV light. Additionally, the relative reflectance of the phase shift film falls within the range of 10% to 40%.
Furthermore, the patent application describes a reflective mask incorporating the same phase shift film structure with a pattern on the multilayer reflective film. The reflective mask maintains the composition and properties of the phase shift film, including the specific phase difference, refractive index, and extinction coefficient values. The relative reflectance of the phase shift film in the reflective mask also falls within the range of 10% to 40%. The design of these reflective mask blanks and reflective masks aims to enhance performance in EUV lithography processes, ensuring precise patterning and imaging capabilities for advanced semiconductor manufacturing applications.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies
