Hoya has been granted a patent for a reflective mask blank with a multilayer reflective film that reflects EUV light and a layered film with low reflectance. The layered film includes a phase shift film to manipulate EUV light phase, enhancing mask performance. GlobalData’s report on Hoya gives a 360-degree view of the company including its patenting strategy. Buy the report here.

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According to GlobalData’s company profile on Hoya, AI-assisted medical imaging was a key innovation area identified from patents. Hoya's grant share as of February 2024 was 56%. Grant share is based on the ratio of number of grants to total number of patents.

Reflective mask blank for euv light lithography

Source: United States Patent and Trademark Office (USPTO). Credit: Hoya Corp

A recently granted patent (Publication Number: US11914281B2) discloses a reflective mask blank designed for reflecting extreme ultraviolet (EUV) light in the manufacturing of semiconductor devices. The reflective mask blank comprises a substrate, a multilayer reflective film for EUV light reflection, and a layered film with a first layer containing a phase shift film to alter the phase of the EUV light. The layered film also includes a second layer aimed at reducing the absolute reflectance to 2.5% or less through optical interference or light absorption. The second layer's composition, thickness, and refractive index are specified to achieve this desired reflectance level.

Furthermore, the patent details the inclusion of specific elements like ruthenium (Ru), tantalum (Ta), chromium (Cr), cobalt (Co), and nickel (Ni) in the layered film to enhance its reflective properties. The protective film between the multilayer reflective film and the first layer contains materials like ruthenium (Ru), silicon (Si) and oxygen (O), yttrium (Y) and oxygen (O), and chromium (Cr). The patent also covers the patterned reflective mask derived from the layered film pattern and a method for manufacturing semiconductor devices using this reflective mask. The innovative design and composition of the reflective mask blank aim to improve the efficiency and precision of semiconductor manufacturing processes by controlling the reflection and phase of EUV light during patterning on semiconductor substrates.

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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.